PSMNR70-40SSHJ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

202 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

15719 pF @ 25 V

FET Feature

Schottky Diode (Body)

FET Type

N-Channel

Power Dissipation (Max)

375W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

40 V

Current - Continuous Drain (Id) @ 25°C

425A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

10V

Rds On (Max) @ Id, Vgs

0.7mOhm @ 25A, 10V

Vgs(th) (Max) @ Id

3.6V @ 1mA

Mounting Type

Surface Mount

Supplier Device Package

LFPAK88 (SOT1235)

Package / Case

SOT-1235

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

PSMNR70