PXN5R4-30QLJ

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Nexperia USA Inc.

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

36.3 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1600 pF @ 15 V

FET Type

N-Channel

Power Dissipation (Max)

1.8W (Ta), 39W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

14A (Ta), 66A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

5.4mOhm @ 14.2A, 10V

Mounting Type

Surface Mount

Supplier Device Package

MLPAK33

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)