Component information
PZT651T1G
PZT651T1G component information and product attributes.
Product information
- Manufacturer
- onsemi
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 75 @ 1A, 2V
- Mfr
- onsemi
- Power - Max
- 800 mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 75MHz
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- NPN
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 2 A
- Package / Case
- TO-261-4, TO-261AA
- Voltage - Collector Emitter Breakdown (Max)
- 60 V
- Supplier Device Package
- SOT-223 (TO-261)
- Vce Saturation (Max) @ Ib, Ic
- 500mV @ 200mA, 2A
- Base Product Number
- PZT651
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
Documentation and references
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