QH8M22TCR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Not For New Designs

Vgs(th) (Max) @ Id

2.5V @ 10µA, 3V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

2.6nC @ 10V, 9.5nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

193pF @ 20V, 450pF @ 20V

Power - Max

1.1W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

N and P-Channel

Drain to Source Voltage (Vdss)

40V

Current - Continuous Drain (Id) @ 25°C

4.5A (Ta), 2A (Ta)

Rds On (Max) @ Id, Vgs

46mOhm @ 4.5A, 10V, 190mOhm @ 2A, 10V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Leads

Supplier Device Package

TSMT8

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

QH8M22