QS5U27TR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

4.2 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

325 pF @ 10 V

FET Feature

Schottky Diode (Isolated)

FET Type

P-Channel

Power Dissipation (Max)

1.25W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

1.5A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

200mOhm @ 1.5A, 4.5V

Vgs(th) (Max) @ Id

2V @ 1mA

Mounting Type

Surface Mount

Supplier Device Package

TSMT5

Package / Case

SOT-23-5 Thin, TSOT-23-5

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

QS5U27