Component information
QS5Y2FSTR
QS5Y2FSTR component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 180 @ 50mA, 3V
- Manufacturer
- Rohm Semiconductor
- Power - Max
- 500mW
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 320MHz, 300MHz
- Part Status
- Active
- Operating Temperature
- 150°C (TJ)
- Transistor Type
- 1 NPN, 1 PNP (Emitter Coupled)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 3A
- Package / Case
- SOT-23-5 Thin, TSOT-23-5
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- TSMT5
- Vce Saturation (Max) @ Ib, Ic
- 350mV @ 50mA, 1A / 400mV @ 50mA, 1A
- Base Product Number
- QS5Y2
- Current - Collector Cutoff (Max)
- 1µA (ICBO)
Documentation and references
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