Component information

QS6J11TR

QS6J11TR component information and product attributes.

Product information

Manufacturer
Rohm Semiconductor
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Vgs(th) (Max) @ Id
1V @ 1mA
Manufacturer
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
6.5nC @ 4.5V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
770pF @ 6V
Part Status
Active
Power - Max
600mW
Technology
MOSFET (Metal Oxide)
Operating Temperature
150°C (TJ)
Configuration
2 P-Channel (Dual)
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
SOT-23-6 Thin, TSOT-23-6
Drain to Source Voltage (Vdss)
12V
Supplier Device Package
TSMT6 (SC-95)
Current - Continuous Drain (Id) @ 25°C
2A
Base Product Number
QS6J11
Rds On (Max) @ Id, Vgs
105mOhm @ 2A, 4.5V

Documentation and references

Reference document ↗

Request a quotation

Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.

Prepare an RFQ

Before requesting a quotation

Check the complete part number