QS6J1TR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

3nC @ 4.5V

Input Capacitance (Ciss) (Max) @ Vds

270pF @ 10V

Power - Max

1.25W

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

20V

Current - Continuous Drain (Id) @ 25°C

1.5A

Rds On (Max) @ Id, Vgs

215mOhm @ 1.5A, 4.5V

Mounting Type

Surface Mount

Package / Case

SOT-23-6 Thin, TSOT-23-6

Supplier Device Package

TSMT6 (SC-95)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

QS6J1