QS8J5TR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

19nC @ 10V

Input Capacitance (Ciss) (Max) @ Vds

1100pF @ 10V

Power - Max

600mW

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Configuration

2 P-Channel (Dual)

FET Feature

Logic Level Gate

Drain to Source Voltage (Vdss)

30V

Current - Continuous Drain (Id) @ 25°C

5A

Rds On (Max) @ Id, Vgs

39mOhm @ 5A, 10V

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Leads

Supplier Device Package

TSMT8

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

QS8J5