Component information

QS8K2TR

QS8K2TR component information and product attributes.

Product information

Manufacturer
Rohm Semiconductor
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Vgs(th) (Max) @ Id
1.5V @ 1mA
Manufacturer
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
4.6nC @ 4.5V
Packaging
Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds
285pF @ 10V
Part Status
Not For New Designs
Power - Max
1.25W
Technology
MOSFET (Metal Oxide)
Operating Temperature
150°C (TJ)
Configuration
2 N-Channel (Dual)
Mounting Type
Surface Mount
FET Feature
Logic Level Gate
Package / Case
8-SMD, Flat Leads
Drain to Source Voltage (Vdss)
30V
Supplier Device Package
TSMT8
Current - Continuous Drain (Id) @ 25°C
3.5A
Base Product Number
QS8K2
Rds On (Max) @ Id, Vgs
54mOhm @ 3.5A, 4.5V

Documentation and references

Reference document ↗

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