Component information
QS8M31TR
QS8M31TR component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA, 3V @ 1mA
- Manufacturer
- Rohm Semiconductor
- Gate Charge (Qg) (Max) @ Vgs
- 4nC @ 5V, 7.2nC @ 5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 270pF @ 10V, 750pF @ 10V
- Part Status
- Active
- Power - Max
- 1.1W (Ta)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Configuration
- N and P-Channel
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 60V
- Package / Case
- 8-SMD, Flat Leads
- Current - Continuous Drain (Id) @ 25°C
- 3A (Ta), 2A (Ta)
- Supplier Device Package
- TSMT8
- Rds On (Max) @ Id, Vgs
- 112mOhm @ 3A, 10V, 210mOhm @ 2A, 10V
- Base Product Number
- QS8M31
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ