QS8M51HZGTR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Rohm Semiconductor

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

4.7nC @ 5V, 17nC @ 5V

Input Capacitance (Ciss) (Max) @ Vds

290pF @ 25V, 950pF @ 25V

Power - Max

1.1W (Ta)

Operating Temperature

-55°C ~ 150°C

Technology

MOSFET (Metal Oxide)

Grade

Automotive

Configuration

N and P-Channel

Qualification

AEC-Q101

Drain to Source Voltage (Vdss)

100V

Current - Continuous Drain (Id) @ 25°C

2A (Ta), 1.5A (Ta)

Rds On (Max) @ Id, Vgs

325mOhm @ 2A, 10V, 470mOhm @ 1.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Mounting Type

Surface Mount

Package / Case

8-SMD, Flat Leads

Supplier Device Package

TSMT8

Packaging

Tape & Reel (TR); Cut Tape (CT)