R6002JND4TL1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

7V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

7 nC @ 15 V

Vgs (Max)

±30V

Input Capacitance (Ciss) (Max) @ Vds

130 pF @ 100 V

FET Type

N-Channel

Power Dissipation (Max)

6.6W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

600 V

Current - Continuous Drain (Id) @ 25°C

1A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V

Rds On (Max) @ Id, Vgs

3.25Ohm @ 1A, 15V

Mounting Type

Surface Mount

Supplier Device Package

SOT-223-3

Package / Case

TO-261-3

Packaging

Tape & Reel (TR); Cut Tape (CT)