Component information

R8002CND3FRATL

R8002CND3FRATL component information and product attributes.

Product information

Manufacturer
Rohm Semiconductor
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Gate Charge (Qg) (Max) @ Vgs
12.1 nC @ 10 V
Mfr
Rohm Semiconductor
Vgs (Max)
±30V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
240 pF @ 25 V
Part Status
Active
Power Dissipation (Max)
69W (Tc)
FET Type
N-Channel
Operating Temperature
150°C (TJ)
Technology
MOSFET (Metal Oxide)
Grade
Automotive
Drain to Source Voltage (Vdss)
800 V
Qualification
AEC-Q101
Current - Continuous Drain (Id) @ 25°C
2A (Tc)
Mounting Type
Surface Mount
Drive Voltage (Max Rds On, Min Rds On)
10V
Supplier Device Package
TO-252
Rds On (Max) @ Id, Vgs
4.3Ohm @ 1A, 10V
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Vgs(th) (Max) @ Id
5.5V @ 1mA
Base Product Number
R8002

Documentation and references

Reference document ↗

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