RD3S100CNTL1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

52 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

2000 pF @ 25 V

FET Type

N-Channel

Power Dissipation (Max)

85W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

-55°C ~ 150°C (TJ)

Drain to Source Voltage (Vdss)

190 V

Current - Continuous Drain (Id) @ 25°C

10A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

4V, 10V

Rds On (Max) @ Id, Vgs

182mOhm @ 5A, 10V

Mounting Type

Surface Mount

Supplier Device Package

TO-252

Package / Case

TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

RD3S100