Component information
RDN080N25FU6
RDN080N25FU6 component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 4V @ 1mA
- Mfr
- Rohm Semiconductor
- Gate Charge (Qg) (Max) @ Vgs
- 30 nC @ 10 V
- Packaging
- Bulk
- Vgs (Max)
- ±30V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 543 pF @ 10 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 35W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 250 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 8A (Ta)
- Supplier Device Package
- TO-220FN
- Drive Voltage (Max Rds On, Min Rds On)
- 10V
- Package / Case
- TO-220-3 Full Pack
- Rds On (Max) @ Id, Vgs
- 500mOhm @ 4A, 10V
- Base Product Number
- RDN080
Documentation and references
Documentation can be discussed with your inquiry.
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