Component information
RGT8NS65DGC9
Rohm Semiconductor RGT8NS65DGC9: Single IGBTs. Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA. Supplier Device Package: TO-262.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Manufacturer
- Rohm Semiconductor
- Part Status
- Not For New Designs
- Input Type
- Standard
- Gate Charge
- 13.5 nC
- Td (on/off) @ 25°C
- 17ns/69ns
- Test Condition
- 400V, 4A, 50Ohm, 15V
- IGBT Type
- Trench Field Stop
- Reverse Recovery Time (trr)
- 40 ns
- Voltage - Collector Emitter Breakdown (Max)
- 650 V
- Operating Temperature
- -40°C ~ 175°C (TJ)
- Current - Collector (Ic) (Max)
- 8 A
- Current - Collector Pulsed (Icm)
- 12 A
- Vce(on) (Max) @ Vge, Ic
- 2.1V @ 15V, 4A
- Power - Max
- 65 W
- Mounting Type
- Through Hole
- Package / Case
- TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package
- TO-262
- Packaging
- Tube
- Base Product Number
- RGT8NS65
Documentation and references
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