Component information
RN1421TE85LF
Toshiba Semiconductor and Storage RN1421TE85LF: Single, Pre-Biased Bipolar Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: S-Mini.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 60 @ 100mA, 1V
- Vce Saturation (Max) @ Ib, Ic
- 250mV @ 2mA, 50mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 300 MHz
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 200 mW
- Current - Collector (Ic) (Max)
- 800 mA
- Voltage - Collector Emitter Breakdown (Max)
- 50 V
- Resistors Included
- R1 and R2
- Resistor - Base (R1)
- 1 kOhms
- Resistor - Emitter Base (R2)
- 1 kOhms
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- S-Mini
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- RN1421
Documentation and references
Request a quotation
Use the complete part number in your inquiry. Confirm suitability and quotation terms for your specific request before ordering.
Prepare an RFQ