Component information
RN1444ATE85LF
Toshiba Semiconductor and Storage RN1444ATE85LF: Single, Pre-Biased Bipolar Transistors. Package / Case: TO-236-3, SC-59, SOT-23-3. Supplier Device Package: S-Mini.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single, Pre-Biased Bipolar Transistors
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Obsolete
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 200 @ 4mA, 2V
- Vce Saturation (Max) @ Ib, Ic
- 100mV @ 3mA, 30mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 30 MHz
- Transistor Type
- NPN - Pre-Biased
- Power - Max
- 200 mW
- Current - Collector (Ic) (Max)
- 300 mA
- Voltage - Collector Emitter Breakdown (Max)
- 20 V
- Resistors Included
- R1 Only
- Resistor - Base (R1)
- 2.2 kOhms
- Mounting Type
- Surface Mount
- Package / Case
- TO-236-3, SC-59, SOT-23-3
- Supplier Device Package
- S-Mini
- Packaging
- Tape & Reel (TR)
- Base Product Number
- RN1444
Documentation and references
Documentation can be discussed with your inquiry.
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