Component information
RN1710,LF
RN1710,LF component information and product attributes.
Product information
- Manufacturer
- Toshiba Semiconductor and Storage
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Manufacturer
- Toshiba Semiconductor and Storage
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Frequency - Transition
- 250MHz
- Part Status
- Active
- Power - Max
- 200mW
- Transistor Type
- 2 NPN - Pre-Biased (Dual)
- Mounting Type
- Surface Mount
- Current - Collector (Ic) (Max)
- 100mA
- Package / Case
- 5-TSSOP, SC-70-5, SOT-353
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Supplier Device Package
- USV
- Resistor - Base (R1)
- 4.7kOhms
- Base Product Number
- RN1710
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V
Documentation and references
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