Component information

RN1911,LXHF(CT

Toshiba Semiconductor and Storage RN1911,LXHF(CT: Bipolar Transistor Arrays, Pre-Biased. Package / Case: 6-TSSOP, SC-88, SOT-363. Supplier Device Package: US6.

Product attributes

Category
Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
Manufacturer
Toshiba Semiconductor and Storage
Part Status
Active
Vce Saturation (Max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250MHz
Power - Max
200mW
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (Ic) (Max)
100mA
Voltage - Collector Emitter Breakdown (Max)
50V
Resistor - Base (R1)
10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
120 @ 1mA, 5V
Mounting Type
Surface Mount
Package / Case
6-TSSOP, SC-88, SOT-363
Supplier Device Package
US6
Packaging
Tape & Reel (TR)
Base Product Number
RN1911

Documentation and references

Reference document ↗

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