Component information
RN2711JE(TE85L,F)
Toshiba Semiconductor and Storage RN2711JE(TE85L,F): Bipolar Transistor Arrays, Pre-Biased. Package / Case: SOT-553. Supplier Device Package: ESV.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 100nA (ICBO)
- Frequency - Transition
- 200MHz
- Power - Max
- 100mW
- Transistor Type
- 2 PNP - Pre-Biased (Dual) (Emitter Coupled)
- Current - Collector (Ic) (Max)
- 100mA
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 10kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 120 @ 1mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-553
- Supplier Device Package
- ESV
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- RN2711
Documentation and references
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