Component information
RN4989FE,LXHF(CT
Toshiba Semiconductor and Storage RN4989FE,LXHF(CT: Bipolar Transistor Arrays, Pre-Biased. Package / Case: SOT-563, SOT-666. Supplier Device Package: ES6.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Bipolar Transistor Arrays, Pre-Biased
- Manufacturer
- Toshiba Semiconductor and Storage
- Part Status
- Active
- Vce Saturation (Max) @ Ib, Ic
- 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max)
- 500nA
- Frequency - Transition
- 250MHz, 200MHz
- Power - Max
- 100mW
- Transistor Type
- 1 NPN, 1 PNP - Pre-Biased (Dual)
- Grade
- Automotive
- Current - Collector (Ic) (Max)
- 100mA
- Qualification
- AEC-Q101
- Voltage - Collector Emitter Breakdown (Max)
- 50V
- Resistor - Base (R1)
- 47kOhms
- Resistor - Emitter Base (R2)
- 22kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 70 @ 10mA, 5V
- Mounting Type
- Surface Mount
- Package / Case
- SOT-563, SOT-666
- Supplier Device Package
- ES6
- Packaging
- Tape & Reel (TR)
- Base Product Number
- RN4989
Documentation and references
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