RQ3E130BNTB

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

36 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1900 pF @ 15 V

FET Type

N-Channel

Power Dissipation (Max)

2W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

13A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

6mOhm @ 13A, 10V

Mounting Type

Surface Mount

Supplier Device Package

8-HSMT (3.2x3)

Package / Case

8-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

RQ3E130