Component information

RQ5H020SPTL

RQ5H020SPTL component information and product attributes.

Product information

Manufacturer
Rohm Semiconductor
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
3V @ 1mA
Mfr
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
9.5 nC @ 10 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±20V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
500 pF @ 10 V
FET Type
P-Channel
Power Dissipation (Max)
540mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
150°C (TJ)
Drain to Source Voltage (Vdss)
45 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Supplier Device Package
TSMT3
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package / Case
SC-96
Rds On (Max) @ Id, Vgs
190mOhm @ 2A, 10V
Base Product Number
RQ5H020

Documentation and references

Reference document ↗

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