RQ6E080AJTCR

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

1.5V @ 2mA

Gate Charge (Qg) (Max) @ Vgs

16.2 nC @ 4.5 V

Vgs (Max)

±12V

Input Capacitance (Ciss) (Max) @ Vds

1810 pF @ 15 V

FET Type

N-Channel

Power Dissipation (Max)

950mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

30 V

Current - Continuous Drain (Id) @ 25°C

8A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

2.5V, 4.5V

Rds On (Max) @ Id, Vgs

16.5mOhm @ 8A, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

TSMT6 (SC-95)

Package / Case

SOT-23-6 Thin, TSOT-23-6

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

RQ6E080