Component information
RS1E200GNTB
RS1E200GNTB component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.5V @ 1mA
- Mfr
- Rohm Semiconductor
- Gate Charge (Qg) (Max) @ Vgs
- 16.8 nC @ 10 V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Vgs (Max)
- ±20V
- Part Status
- Active
- Input Capacitance (Ciss) (Max) @ Vds
- 1080 pF @ 15 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 3W (Ta), 25W (Tc)
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- 150°C (TJ)
- Drain to Source Voltage (Vdss)
- 30 V
- Mounting Type
- Surface Mount
- Current - Continuous Drain (Id) @ 25°C
- 20A (Ta), 57A (Tc)
- Supplier Device Package
- 8-HSOP
- Drive Voltage (Max Rds On, Min Rds On)
- 4.5V, 10V
- Package / Case
- 8-PowerTDFN
- Rds On (Max) @ Id, Vgs
- 4.6mOhm @ 20A, 10V
- Base Product Number
- RS1E
Documentation and references
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