RS3E075ATTB

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Not For New Designs

Gate Charge (Qg) (Max) @ Vgs

25 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

1250 pF @ 15 V

Power Dissipation (Max)

2W (Ta)

FET Type

P-Channel

Operating Temperature

150°C (TJ)

Technology

MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss)

30 V

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

23.5mOhm @ 7.5A, 10V

Vgs(th) (Max) @ Id

2.5V @ 1mA

Mounting Type

Surface Mount

Supplier Device Package

8-SOP-J

Package / Case

8-SOIC (0.154", 3.90mm Width)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

RS3E