RS3L110ATTB1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

2.5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

115 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

6300 pF @ 30 V

FET Type

P-Channel

Power Dissipation (Max)

1.4W (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

60 V

Current - Continuous Drain (Id) @ 25°C

11A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

4.5V, 10V

Rds On (Max) @ Id, Vgs

12.8mOhm @ 11A, 10V

Mounting Type

Surface Mount

Supplier Device Package

8-SOP

Package / Case

8-SOIC (0.154", 3.90mm Width)

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

RS3L