RS7N160BHTB1

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

73 nC @ 10 V

Vgs (Max)

±20V

Input Capacitance (Ciss) (Max) @ Vds

4470 pF @ 40 V

FET Type

N-Channel

Power Dissipation (Max)

3W (Ta), 160W (Tc)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

80 V

Current - Continuous Drain (Id) @ 25°C

160A (Ta)

Drive Voltage (Max Rds On, Min Rds On)

6V, 10V

Rds On (Max) @ Id, Vgs

2.6mOhm @ 50A, 10V

Mounting Type

Surface Mount

Supplier Device Package

DFN5060-8S

Package / Case

8-PowerTDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)