Component information

RSD160P05TL

RSD160P05TL component information and product attributes.

Product information

Manufacturer
Rohm Semiconductor
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
3V @ 1mA
Mfr
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
16 nC @ 5 V
Packaging
Tape & Reel (TR)
Vgs (Max)
±20V
Part Status
Last Time Buy
Input Capacitance (Ciss) (Max) @ Vds
2000 pF @ 10 V
FET Type
P-Channel
Power Dissipation (Max)
20W (Tc)
Technology
MOSFET (Metal Oxide)
Operating Temperature
150°C (TJ)
Drain to Source Voltage (Vdss)
45 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
16A (Ta)
Supplier Device Package
CPT3
Drive Voltage (Max Rds On, Min Rds On)
4V, 10V
Package / Case
TO-252-3, DPAK (2 Leads + Tab), SC-63
Rds On (Max) @ Id, Vgs
50mOhm @ 16A, 10V
Base Product Number
RSD160

Documentation and references

Reference document ↗

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