Component information
RTU002P02T106
RTU002P02T106 component information and product attributes.
Product information
- Manufacturer
- Rohm Semiconductor
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2V @ 1mA
- Mfr
- Rohm Semiconductor
- Vgs (Max)
- ±12V
- Packaging
- Tape & Reel (TR)
- Input Capacitance (Ciss) (Max) @ Vds
- 50 pF @ 10 V
- Part Status
- Not For New Designs
- Power Dissipation (Max)
- 200mW (Ta)
- FET Type
- P-Channel
- Operating Temperature
- 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Drain to Source Voltage (Vdss)
- 20 V
- Supplier Device Package
- UMT3
- Current - Continuous Drain (Id) @ 25°C
- 250mA (Ta)
- Package / Case
- SC-70, SOT-323
- Drive Voltage (Max Rds On, Min Rds On)
- 2.5V, 4.5V
- Base Product Number
- RTU002
- Rds On (Max) @ Id, Vgs
- 1.5Ohm @ 250mA, 4.5V
Documentation and references
Documentation can be discussed with your inquiry.
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