RU1C002ZPTCL

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

1V @ 100µA

Gate Charge (Qg) (Max) @ Vgs

1.4 nC @ 4.5 V

Vgs (Max)

±10V

Input Capacitance (Ciss) (Max) @ Vds

115 pF @ 10 V

FET Type

P-Channel

Power Dissipation (Max)

150mW (Ta)

Technology

MOSFET (Metal Oxide)

Operating Temperature

150°C (TJ)

Drain to Source Voltage (Vdss)

20 V

Current - Continuous Drain (Id) @ 25°C

200mA (Ta)

Drive Voltage (Max Rds On, Min Rds On)

1.2V, 4.5V

Rds On (Max) @ Id, Vgs

1.2Ohm @ 200mA, 4.5V

Mounting Type

Surface Mount

Supplier Device Package

UMT3F

Package / Case

SC-85

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

RU1C002