Component information

RUR020N02TL

RUR020N02TL component information and product attributes.

Product information

Manufacturer
Rohm Semiconductor
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1V @ 1mA
Mfr
Rohm Semiconductor
Gate Charge (Qg) (Max) @ Vgs
2 nC @ 4.5 V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Vgs (Max)
±10V
Part Status
Active
Input Capacitance (Ciss) (Max) @ Vds
180 pF @ 10 V
FET Type
N-Channel
Power Dissipation (Max)
540mW (Ta)
Technology
MOSFET (Metal Oxide)
Operating Temperature
150°C (TJ)
Drain to Source Voltage (Vdss)
20 V
Mounting Type
Surface Mount
Current - Continuous Drain (Id) @ 25°C
2A (Ta)
Supplier Device Package
TSMT3
Drive Voltage (Max Rds On, Min Rds On)
1.5V, 4.5V
Package / Case
SC-96
Rds On (Max) @ Id, Vgs
105mOhm @ 2A, 4.5V
Base Product Number
RUR020

Documentation and references

Reference document ↗

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