Component information
RV8C010UNHZGG2CR
Rohm Semiconductor RV8C010UNHZGG2CR: Single FETs, MOSFETs. Package / Case: 3-XFDFN. Supplier Device Package: DFN1010-3W.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- Rohm Semiconductor
- Part Status
- Active
- Vgs (Max)
- ±8V
- Input Capacitance (Ciss) (Max) @ Vds
- 40 pF @ 10 V
- Power Dissipation (Max)
- 1W
- Operating Temperature
- 150°C (TJ)
- FET Type
- N-Channel
- Grade
- Automotive
- Technology
- MOSFET (Metal Oxide)
- Qualification
- AEC-Q101
- Drain to Source Voltage (Vdss)
- 20 V
- Current - Continuous Drain (Id) @ 25°C
- 1A (Ta)
- Rds On (Max) @ Id, Vgs
- 470mOhm @ 500mA, 4.5V
- Vgs(th) (Max) @ Id
- 1V @ 1mA
- Mounting Type
- Surface Mount
- Supplier Device Package
- DFN1010-3W
- Package / Case
- 3-XFDFN
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- RV8C010
Documentation and references
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