Component information
SBSP52T1G
onsemi SBSP52T1G: Single Bipolar Transistors. Package / Case: TO-261-4, TO-261AA. Supplier Device Package: SOT-223 (TO-261).
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; Bipolar (BJT); Single Bipolar Transistors
- Mfr
- onsemi
- Part Status
- Active
- DC Current Gain (hFE) (Min) @ Ic, Vce
- 2000 @ 500mA, 10V
- Power - Max
- 800 mW
- Operating Temperature
- -65°C ~ 150°C (TJ)
- Grade
- Automotive
- Transistor Type
- NPN - Darlington
- Qualification
- AEC-Q101
- Current - Collector (Ic) (Max)
- 1 A
- Voltage - Collector Emitter Breakdown (Max)
- 80 V
- Vce Saturation (Max) @ Ib, Ic
- 1.3V @ 500µA, 500mA
- Current - Collector Cutoff (Max)
- 10µA
- Mounting Type
- Surface Mount
- Package / Case
- TO-261-4, TO-261AA
- Supplier Device Package
- SOT-223 (TO-261)
- Packaging
- Tape & Reel (TR); Cut Tape (CT)
- Base Product Number
- SBSP52
Documentation and references
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