SCT012H90G3AG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

138 nC @ 18 V

Vgs (Max)

+18V, -5V

Input Capacitance (Ciss) (Max) @ Vds

3880 pF @ 600 V

Power Dissipation (Max)

625W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Grade

Automotive

Drain to Source Voltage (Vdss)

900 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

110A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

15.8mOhm @ 60A, 18V

Vgs(th) (Max) @ Id

4.2V @ 10mA

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)