Component information
SCT025W120G3AG
STMicroelectronics SCT025W120G3AG: Single FETs, MOSFETs. Package / Case: TO-247-3. Supplier Device Package: HiP247™.
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Mfr
- STMicroelectronics
- Part Status
- Active
- Gate Charge (Qg) (Max) @ Vgs
- 73 nC @ 18 V
- Vgs (Max)
- +18V, -5V
- Input Capacitance (Ciss) (Max) @ Vds
- 1990 pF @ 800 V
- Power Dissipation (Max)
- 388W (Tc)
- FET Type
- N-Channel
- Operating Temperature
- -55°C ~ 200°C (TJ)
- Technology
- SiCFET (Silicon Carbide)
- Grade
- Automotive
- Drain to Source Voltage (Vdss)
- 1200 V
- Qualification
- AEC-Q101
- Current - Continuous Drain (Id) @ 25°C
- 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On)
- 15V, 18V
- Rds On (Max) @ Id, Vgs
- 37mOhm @ 25A, 18V
- Vgs(th) (Max) @ Id
- 4.2V @ 5mA
- Mounting Type
- Through Hole
- Supplier Device Package
- HiP247™
- Package / Case
- TO-247-3
- Packaging
- Tube
Documentation and references
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