SCT070H120G3AG

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Part Status

Active

Gate Charge (Qg) (Max) @ Vgs

37 nC @ 18 V

Vgs (Max)

+18V, -5V

Input Capacitance (Ciss) (Max) @ Vds

900 pF @ 850 V

Power Dissipation (Max)

223W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Grade

Automotive

Drain to Source Voltage (Vdss)

1200 V

Qualification

AEC-Q101

Current - Continuous Drain (Id) @ 25°C

30A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

15V, 18V

Rds On (Max) @ Id, Vgs

87mOhm @ 15A, 18V

Vgs(th) (Max) @ Id

4.2V @ 1mA

Mounting Type

Surface Mount

Supplier Device Package

H2PAK-7

Package / Case

TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging

Tape & Reel (TR); Cut Tape (CT)