SCT2H12NZGC11

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

4V @ 900µA

Gate Charge (Qg) (Max) @ Vgs

14 nC @ 18 V

Vgs (Max)

+22V, -6V

Input Capacitance (Ciss) (Max) @ Vds

184 pF @ 800 V

FET Type

N-Channel

Power Dissipation (Max)

35W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

175°C (TJ)

Drain to Source Voltage (Vdss)

1700 V

Current - Continuous Drain (Id) @ 25°C

3.7A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

1.5Ohm @ 1.1A, 18V

Mounting Type

Through Hole

Supplier Device Package

TO-3PFM

Package / Case

TO-3PFM, SC-93-3

Packaging

Tube

Base Product Number

SCT2H12