SCT3022ALGC11

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

Rohm Semiconductor

Part Status

Active

Vgs(th) (Max) @ Id

5.6V @ 18.2mA

Gate Charge (Qg) (Max) @ Vgs

133 nC @ 18 V

Vgs (Max)

+22V, -4V

Input Capacitance (Ciss) (Max) @ Vds

2208 pF @ 500 V

FET Type

N-Channel

Power Dissipation (Max)

339W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

175°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

93A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

28.6mOhm @ 36A, 18V

Mounting Type

Through Hole

Supplier Device Package

TO-247N

Package / Case

TO-247-3

Packaging

Tube

Base Product Number

SCT3022