Component information
SCT30N120
SCT30N120 component information and product attributes.
Product information
- Manufacturer
- STMicroelectronics
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
- Vgs(th) (Max) @ Id
- 2.6V @ 1mA (Typ)
- Mfr
- STMicroelectronics
- Gate Charge (Qg) (Max) @ Vgs
- 105 nC @ 20 V
- Packaging
- Tube
- Vgs (Max)
- +25V, -10V
- Part Status
- Obsolete
- Input Capacitance (Ciss) (Max) @ Vds
- 1700 pF @ 400 V
- FET Type
- N-Channel
- Power Dissipation (Max)
- 270W (Tc)
- Technology
- SiCFET (Silicon Carbide)
- Operating Temperature
- -55°C ~ 200°C (TJ)
- Drain to Source Voltage (Vdss)
- 1200 V
- Mounting Type
- Through Hole
- Current - Continuous Drain (Id) @ 25°C
- 40A (Tc)
- Supplier Device Package
- HiP247™
- Drive Voltage (Max Rds On, Min Rds On)
- 20V
- Package / Case
- TO-247-3
- Rds On (Max) @ Id, Vgs
- 100mOhm @ 20A, 20V
- Base Product Number
- SCT30
Documentation and references
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