SCTL35N65G2V

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Part Status

Last Time Buy

Gate Charge (Qg) (Max) @ Vgs

73 nC @ 20 V

Vgs (Max)

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds

1370 pF @ 400 V

Power Dissipation (Max)

417W (Tc)

FET Type

N-Channel

Operating Temperature

-55°C ~ 175°C (TJ)

Technology

SiCFET (Silicon Carbide)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Rds On (Max) @ Id, Vgs

67mOhm @ 20A, 20V

Vgs(th) (Max) @ Id

5V @ 1mA

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (8x8) HV

Package / Case

4-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SCTL35