SCTL90N65G2V

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Mfr

STMicroelectronics

Part Status

Last Time Buy

Vgs(th) (Max) @ Id

5V @ 1mA

Gate Charge (Qg) (Max) @ Vgs

157 nC @ 18 V

Vgs (Max)

+22V, -10V

Input Capacitance (Ciss) (Max) @ Vds

3380 pF @ 400 V

FET Type

N-Channel

Power Dissipation (Max)

935W (Tc)

Technology

SiCFET (Silicon Carbide)

Operating Temperature

-55°C ~ 175°C (TJ)

Drain to Source Voltage (Vdss)

650 V

Current - Continuous Drain (Id) @ 25°C

40A (Tc)

Drive Voltage (Max Rds On, Min Rds On)

18V

Rds On (Max) @ Id, Vgs

24mOhm @ 40A, 18V

Mounting Type

Surface Mount

Supplier Device Package

PowerFlat™ (8x8) HV

Package / Case

4-PowerVDFN

Packaging

Tape & Reel (TR); Cut Tape (CT)