Component information
SGB02N120ATMA1
SGB02N120ATMA1 component information and product attributes.
Product information
- Manufacturer
- Infineon Technologies
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; IGBTs; Single IGBTs
- Switching Energy
- 220µJ
- Manufacturer
- Infineon Technologies
- Input Type
- Standard
- Packaging
- Tape & Reel (TR)
- Gate Charge
- 11 nC
- Part Status
- Obsolete
- Td (on/off) @ 25°C
- 23ns/260ns
- IGBT Type
- NPT
- Test Condition
- 800V, 2A, 91Ohm, 15V
- Voltage - Collector Emitter Breakdown (Max)
- 1200 V
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Current - Collector (Ic) (Max)
- 6.2 A
- Mounting Type
- Surface Mount
- Current - Collector Pulsed (Icm)
- 9.6 A
- Package / Case
- TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Vce(on) (Max) @ Vge, Ic
- 3.6V @ 15V, 2A
- Supplier Device Package
- PG-TO263-3-2
- Power - Max
- 62 W
- Base Product Number
- SGB02N
Documentation and references
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