Component information
SI1029X-T1-GE3
SI1029X-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 1.4Ohm @ 500mA, 10V
- Manufacturer
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 2.5V @ 250µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 750nC @ 4.5V, 1700nC @ 4.5V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Input Capacitance (Ciss) (Max) @ Vds
- 30pF @ 25V, 23pF @ 25V
- Part Status
- Obsolete
- Power - Max
- 250mW
- Technology
- MOSFET (Metal Oxide)
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Configuration
- N and P-Channel
- Mounting Type
- Surface Mount
- FET Feature
- Logic Level Gate
- Package / Case
- SOT-563, SOT-666
- Drain to Source Voltage (Vdss)
- 60V
- Supplier Device Package
- SC-89 (SOT-563F)
- Current - Continuous Drain (Id) @ 25°C
- 305mA, 190mA
- Base Product Number
- SI1029
Documentation and references
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