Component information

SI1308EDL-T1-GE3

Vishay Siliconix SI1308EDL-T1-GE3: Single FETs, MOSFETs. Package / Case: SC-70, SOT-323. Supplier Device Package: SC-70-3.

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Mfr
Vishay Siliconix
Series
TrenchFET®
Part Status
Active
Vgs(th) (Max) @ Id
1.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
4.1 nC @ 10 V
Vgs (Max)
±12V
Input Capacitance (Ciss) (Max) @ Vds
105 pF @ 15 V
Power Dissipation (Max)
400mW (Ta), 500mW (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
1.4A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 10V
Rds On (Max) @ Id, Vgs
132mOhm @ 1.4A, 10V
Mounting Type
Surface Mount
Supplier Device Package
SC-70-3
Package / Case
SC-70, SOT-323
Packaging
Tape & Reel (TR); Cut Tape (CT)
Base Product Number
SI1308

Documentation and references

Reference document ↗

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