Component information

SI1442DH-T1-GE3

SI1442DH-T1-GE3 component information and product attributes.

Product information

Manufacturer
Vishay Siliconix
Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs

Product attributes

Category
Discrete Semiconductor Products; Transistors; FETs, MOSFETs; Single FETs, MOSFETs
Vgs(th) (Max) @ Id
1V @ 250µA
Mfr
Vishay Siliconix
Gate Charge (Qg) (Max) @ Vgs
33 nC @ 8 V
Series
TrenchFET®
Vgs (Max)
±8V
Packaging
Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
Input Capacitance (Ciss) (Max) @ Vds
1010 pF @ 6 V
Part Status
Active
Power Dissipation (Max)
1.56W (Ta), 2.8W (Tc)
FET Type
N-Channel
Operating Temperature
-55°C ~ 150°C (TJ)
Technology
MOSFET (Metal Oxide)
Mounting Type
Surface Mount
Drain to Source Voltage (Vdss)
12 V
Supplier Device Package
SC-70-6
Current - Continuous Drain (Id) @ 25°C
4A (Ta)
Package / Case
6-TSSOP, SC-88, SOT-363
Drive Voltage (Max Rds On, Min Rds On)
1.8V, 4.5V
Base Product Number
SI1442
Rds On (Max) @ Id, Vgs
20mOhm @ 6A, 4.5V

Documentation and references

Reference document ↗

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