Component information
SI1922EDH-T1-GE3
SI1922EDH-T1-GE3 component information and product attributes.
Product information
- Manufacturer
- Vishay Siliconix
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
Product attributes
- Category
- Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays
- Rds On (Max) @ Id, Vgs
- 198mOhm @ 1A, 4.5V
- Manufacturer
- Vishay Siliconix
- Vgs(th) (Max) @ Id
- 1V @ 250µA
- Series
- TrenchFET®
- Gate Charge (Qg) (Max) @ Vgs
- 2.5nC @ 8V
- Packaging
- Tape & Reel (TR); Cut Tape (CT); Digi-Reel®
- Power - Max
- 1.25W
- Part Status
- Active
- Operating Temperature
- -55°C ~ 150°C (TJ)
- Technology
- MOSFET (Metal Oxide)
- Mounting Type
- Surface Mount
- Configuration
- 2 N-Channel (Dual)
- Package / Case
- 6-TSSOP, SC-88, SOT-363
- FET Feature
- Logic Level Gate
- Supplier Device Package
- SC-70-6
- Drain to Source Voltage (Vdss)
- 20V
- Base Product Number
- SI1922
- Current - Continuous Drain (Id) @ 25°C
- 1.3A
Documentation and references
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