SI1965DH-T1-BE3

Product attributes

Category

Discrete Semiconductor Products; Transistors; FETs, MOSFETs; FET, MOSFET Arrays

Manufacturer

Vishay Siliconix

Series

TrenchFET®

Part Status

Last Time Buy

Vgs(th) (Max) @ Id

1V @ 250µA

Gate Charge (Qg) (Max) @ Vgs

4.2nC @ 8V

Input Capacitance (Ciss) (Max) @ Vds

120pF @ 6V

Power - Max

740mW (Ta), 1.25W (Tc)

Operating Temperature

-55°C ~ 150°C (TJ)

Technology

MOSFET (Metal Oxide)

Configuration

2 P-Channel (Dual)

Drain to Source Voltage (Vdss)

12V

Current - Continuous Drain (Id) @ 25°C

1.14A (Ta), 1.3A (Tc)

Rds On (Max) @ Id, Vgs

390mOhm @ 1A, 4.5V

Mounting Type

Surface Mount

Package / Case

6-TSSOP, SC-88, SOT-363

Supplier Device Package

SC-70-6

Packaging

Tape & Reel (TR); Cut Tape (CT)

Base Product Number

SI1965